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1. product profile 1.1 general description a 1200 w ldmos power transistor for broadcast applications and industrial applications in the hf to 110 mhz band. 1.2 features and benefits ? typical pulsed performance at frequency of 108 mhz, a supply voltage of 50 v and an i dq of 40 ma, a t p of 100 ? s with ? of 20 %: ? output power = 1200 w ? power gain = 28.5 db ? efficiency = 75 % ? easy power control ? integrated esd protection ? excellent ruggedness ? high efficiency ? excellent thermal stability ? designed for broadband operation (10 mhz to 110 mhz) ? compliant to directive 2002/ 95/ec, regarding restriction of hazardous substances (rohs) 1.3 applications ? industrial, scientific and medical applications ? fm transmitter applications blf178p power ldmos transistor rev. 2 ? 16 february 2012 product data sheet table 1. application information test signal f v ds p l g p ? d (mhz) (v) (w) (db) (%) cw 108 50 1000 26 75 pulsed rf 108 50 1200 28.5 75
blf178p all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 2 ? 16 february 2012 2 of 13 nxp semiconductors blf178p power ldmos transistor 2. pinning information [1] connected to flange. 3. ordering information 4. limiting values table 2. pinning pin description simplified outline graphic symbol 1drain1 2drain2 3gate1 4gate2 5source [1] 5 12 43 4 3 5 1 2 sym117 table 3. ordering information type number package name description version blf178p - flanged balanced ldmost ceramic package; 2 mounting holes; 4 leads sot539a table 4. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage - 110 v v gs gate-source voltage ? 0.5 +11 v i d drain current - 88 a t stg storage temperature ? 65 +150 ?c t j junction temperature - 225 ?c
blf178p all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 2 ? 16 february 2012 3 of 13 nxp semiconductors blf178p power ldmos transistor 5. thermal characteristics [1] t j is the junction temperature. [2] r th(j-c) is measured under rf conditions. [3] see figure 1 . 6. characteristics table 5. thermal characteristics symbol parameter conditions typ unit r th(j-c) thermal resistance from junction to case t j = 150 ?c [1] [2] 0.14 k/w z th(j-c) transient thermal impedance from junction to case t j = 150 ?c; t p = 100 ? s; ? =20% [3] 0.04 k/w (1) ? = 1 % (2) ? = 2 % (3) ? = 5 % (4) ? = 10 % (5) ? = 20 % (6) ? = 50 % (7) ? = 100 % (dc) fig 1. transient thermal impedance from junction to case as a function of pulse duration 001aak924 0.06 0.12 0.18 z th(j-c) (k/w) 0 10 ?7 10 ?1 10 ?4 10 ?6 1 10 ?3 t p (s) 10 ?5 10 10 ?2 (7) (6) (5) (4) (3) (2) (1) table 6. dc characteristics t j = 25 ? c; per section unless otherwise specified. symbol parameter conditions min typ max unit v (br)dss drain-source breakdown voltage v gs =0v; i d =2.5ma110--v v gs(th) gate-source threshold voltage v ds =10 v; i d = 500 ma 1.25 1.7 2.25 v v gsq gate-source quiescent voltage v ds =50 v; i d =20ma 0.8 1.3 1.8 v i dss drain leakage current v gs =0v; v ds =50v--2.8 ? a
blf178p all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 2 ? 16 february 2012 4 of 13 nxp semiconductors blf178p power ldmos transistor 6.1 ruggedness in class-ab operation the blf178p is capable of withstanding a load mismatch corresponding to vswr = 13 : 1 through all phases under the following conditions: v ds =50v; i dq =40ma; p l = 1200 w pulsed; f = 108 mhz. i dsx drain cut-off current v gs =v gs(th) +3.75 v; v ds =10v 58 71 - a i gss gate leakage current v gs =11v; v ds = 0 v - - 280 na r ds(on) drain-source on-state resistance v gs =v gs(th) + 3.75 v; i d =16.66a -0.07- ? c rs feedback capacitance v gs =0v; v ds =50v; f= 1mhz -3-pf c iss input capacitance v gs =0v; v ds =50v; f=1mhz -403-pf c oss output capacitance v gs =0v; v ds =50v; f=1mhz -138-pf table 7. rf characteristics test signal: pulsed rf; t p = 100 ? s; ? = 20 %; f = 108 mhz; rf performance at v ds =50v; i dq =40ma; t case = 25 ? c; unless otherwise specified; in a class-ab production test circuit. symbol parameter conditions min typ max unit g p power gain p l = 1200 w 27 28.5 31 db rl in input return loss p l = 1200 w - ? 16 ? 12 db ? d drain efficiency p l = 1200 w 71 75 - % v gs = 0 v; f = 1 mhz. fig 2. output capacitance as a function of drain-source voltage; typical values per section table 6. dc characteristics ?continued t j = 25 ? c; per section unless otherwise specified. symbol parameter conditions min typ max unit v ds (v) 050 20 30 40 10 001aaj113 300 150 450 600 750 900 c oss (pf) 0
blf178p all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 2 ? 16 february 2012 5 of 13 nxp semiconductors blf178p power ldmos transistor 7. test information 7.1 impedance information 7.2 rf performance the following figures are measured in a class-ab production test circuit. 7.2.1 1-tone cw pulsed table 8. typical impedance simulated z s and z l test circuit impedances. f z s z l mhz ? ? 108 3.91 ?? j3.56 3.59 ? j1.73 fig 3. definition of transistor impedance 001aaf059 drain z l z s gate v ds = 50 v; i dq = 40 ma; f = 108 mhz; t p = 100 ? s; ? =20%. v ds = 50 v; i dq = 40 ma; f = 108 mhz; t p = 100 ? s; ? =20%. (1) p l(1db) = 60.8 dbm (1214 w) (2) p l(3db) = 61.2 dbm (1319 w) fig 4. power gain and drain efficiency as function of output power; typical values fig 5. output power as a function of input power; typical values aaa-002242 31 g p (db) d (%) 23 p l (w) 100 500 900 1300 1500 1100 700 300 25 27 29 80 0 20 40 60 g p d aaa-002243 p i (dbm) 29 35 33 31 62 60 64 66 p l (dbm) 58 ideal p l p l (1) (2)
blf178p all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 2 ? 16 february 2012 6 of 13 nxp semiconductors blf178p power ldmos transistor v ds = 50 v; f = 108 mhz; t p = 100 ? s; ? =20%. (1) i dq =0ma (2) i dq =20ma (3) i dq =40ma (4) i dq =80ma (5) i dq = 160 ma v ds = 50 v; f = 108 mhz; t p = 100 ? s; ? =20%. (1) i dq =0ma (2) i dq =20ma (3) i dq =40ma (4) i dq =80ma (5) i dq = 160 ma fig 6. power gain as a function of output power; typical values fig 7. drain efficiency as a function of output power; typical values aaa-002244 32 g p (db) 24 p l (w) 100 500 900 1300 1500 1100 700 300 26 28 30 (5) (4) (3) (2) (1) aaa-002245 80 d (%) 0 p l (w) 100 500 900 1300 1500 1100 700 300 20 40 60 (5) (4) (3) (2) (1)
blf178p all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 2 ? 16 february 2012 7 of 13 nxp semiconductors blf178p power ldmos transistor i dq = 40 ma; f = 108 mhz; t p = 100 ? s; ? =20%. (1) v ds =15v (2) v ds =20v (3) v ds =25v (4) v ds =30v (5) v ds =35v (6) v ds =40v (7) v ds =45v (8) v ds =50v i dq = 40 ma; f = 108 mhz; t p = 100 ? s; ? =20%. (1) v ds =15v (2) v ds =20v (3) v ds =25v (4) v ds =30v (5) v ds =35v (6) v ds =40v (7) v ds =45v (8) v ds =50v fig 8. power gain as a function of output power; typical values fig 9. drain efficiency as a function of output power; typical values aaa-002246 32 g p (db) 20 p l (w) 0 400 800 1200 1400 1000 600 200 30 28 26 24 22 (6) (5) (4) (3) (7) (2) (8) (1) aaa-002247 90 d (%) 10 p l (w) 0 400 800 1200 1400 1000 600 200 30 50 70 (6) (5) (4) (3) (7) (2) (8) (1)
blf178p all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 2 ? 16 february 2012 8 of 13 nxp semiconductors blf178p power ldmos transistor 7.3 test circuit [1] american technical ce ramics type 800b or capacitor of same quality. printed-circuit board (pcb): rf 35; ? r = 3.5; thickness = 0.76 mm; thickness copper plating = 35 ? m. see table 9 for a list of components. fig 10. component layout for class-ab production test circuit aaa-002248 t1 t2 blf178p output rev1 blf178p intput rev1 23 mm c16 c14 l5 c12 c18 c4 c3 c15 r4 r3 c7 +vgs +vgs c5 c6 c8 r1 r2 c11 c13 +vds c10 +vds c19 c20 c21 c22 l7 l8 c17 l3 l4 l1 c1 c2 l2 l6 table 9. list of components for test circuit see figure 10 . component description value remarks c1, c2, c5, c6, c14, c15, c21, c22 multilayer ceramic chip capacitor 1 nf [1] c3 multilayer ceramic chip capacitor 82 pf [1] c4 multilayer ceramic chip capacitor 240 pf [1] c7, c8 multilayer ceramic chip capacitor 4.7 ? f; 50 v c10, c11 electroly tic capacitor 1000 ? f; 63 v c12, c13 multilayer cera mic chip capacitor 4.7 ? f; 100 v c16, c17 multilayer cera mic chip capacitor 120 pf [1] c18 multilayer ceramic chip capacitor 82 pf [1] c19 multilayer ceramic chip capacitor 110 pf [1] c20 multilayer ceramic chip capacitor 56 pf [1] l1, l2, l3, l4 1.5 turn 0.8 mm copper wire d = 3 mm; length=2mm l5, l6 5 turn 0.8 mm copper wire d = 3 mm; length = 4.5 mm l7, l8 2.5 turn 0.8 mm copper wire d = 3 mm; length=3mm r1, r2 smd resistor 100 ? philips 1206 r3, r4 smd resistor 9.1 ? philips 1206 t1 semi rigid coax 25 ? ; 160 mm ut-090c-25 t2 semi rigid coax 25 ? ; 160 mm ut-141c-25
blf178p all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 2 ? 16 february 2012 9 of 13 nxp semiconductors blf178p power ldmos transistor 8. package outline fig 11. package outline sot539a references outline version european projection issue date iec jedec eiaj sot539a 10-02-02 00-03-03 0 5 10 mm scale p a f b e d u 2 l h q c 5 12 4 3 d 1 e a w 1 ab m m m q u 1 h 1 c b m m w 2 c e 1 m w 3 unit a mm d b 11.81 11.56 0.18 0.10 31.55 30.94 13.72 9.53 9.27 17.12 16.10 10.29 10.03 4.7 4.2 c e u 2 0.25 0.25 0.51 w 3 35.56 qw 2 w 1 f 1.75 1.50 u 1 41.28 41.02 h 1 25.53 25.27 p 3.30 3.05 q 2.26 2.01 ee 1 9.50 9.30 inches 0.465 0.455 0.007 0.004 1.242 1.218 d 1 31.52 30.96 1.241 1.219 0.540 0.375 0.365 0.674 0.634 0.405 0.395 0.185 0.165 0.010 0.010 0.020 1.400 0.069 0.059 1.625 1.615 1.005 0.995 0.130 0.120 0.089 0.079 0.374 0.366 h 3.48 2.97 0.137 0.117 l dimensions (millimetre dimensions are derived from the original inch dimensions) flanged balanced ldmost ceramic package; 2 mounting holes; 4 leads sot539a note 1. millimeter dimensions are derived from the original inch dimensions. 2. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on m3 screw.
blf178p all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 2 ? 16 february 2012 10 of 13 nxp semiconductors blf178p power ldmos transistor 9. handling information 10. abbreviations 11. revision history caution this device is sensitive to electrostatic di scharge (esd). therefore care should be taken during transport and handling. table 10. abbreviations acronym description cw continuous wave dc direct current esd electrostatic discharge fm frequency modulation hf high frequency ldmos laterally diffused metal-oxide semiconductor ldmost laterally diffused metal-oxide semiconductor transistor rf radio frequency smd surface mounted device vswr voltage standing-wave ratio table 11. revision history document id release date data sheet status change notice supersedes blf178p v.2 20120216 product data sheet - blf178p v.1 modifications ? the status of this document has been changed to product data sheet. ? table 1 on page 1 : ?mode of operation? has been changed to ?test signal?. ? table 1 on page 1 : the value for g p has been changed. ? section 1.2 on page 1 : some values have been changed ? table 6 on page 3 : the value for i dsx has been changed ? table 7 on page 4 : ?mode of operation? has been changed to ?test signal?. ? table 7 on page 4 : several values have been changed. ? section 7 on page 5 : section has been added. ? removed section ?reliability?. ? section 9 on page 10 : section has been added. blf178p v.1 20110405 objective data sheet - -
blf178p all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 2 ? 16 february 2012 11 of 13 nxp semiconductors blf178p power ldmos transistor 12. legal information 12.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term ?short data sheet? is explained in section ?definitions?. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple device s. the latest product status information is available on the internet at url http://www.nxp.com . 12.2 definitions draft ? the document is a draft versi on only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall hav e no liability for the consequences of use of such information. short data sheet ? a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request vi a the local nxp semiconductors sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. product specification ? the information and data provided in a product data sheet shall define the specification of the product as agreed between nxp semiconductors and its customer , unless nxp semiconductors and customer have explicitly agreed otherwis e in writing. in no event however, shall an agreement be valid in which the nxp semiconductors product is deemed to offer functions and qualities beyond those described in the product data sheet. 12.3 disclaimers limited warranty and liability ? information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such info rmation. nxp semiconductors takes no responsibility for the content in this document if provided by an information source outside of nxp semiconductors. in no event shall nxp semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. notwithstanding any damages that customer might incur for any reason whatsoever, nxp semiconductors? aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the terms and conditions of commercial sale of nxp semiconductors. right to make changes ? nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use ? nxp semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors and its suppliers accept no liability for inclusion and/or use of nxp semiconducto rs products in such equipment or applications and therefore such inclusion and/or use is at the customer?s own risk. applications ? applications that are described herein for any of these products are for illustrative purpos es only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. customers are responsible for the design and operation of their applications and products using nxp semiconductors products, and nxp semiconductors accepts no liability for any assistance with applications or customer product design. it is customer?s sole responsibility to determine whether the nxp semiconductors product is suitable and fit for the customer?s applications and products planned, as well as fo r the planned application and use of customer?s third party customer(s). customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. nxp semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer?s applications or products, or the application or use by customer?s third party customer(s). customer is responsible for doing all necessary testing for the customer?s applic ations and products using nxp semiconductors products in order to av oid a default of the applications and the products or of the application or use by customer?s third party customer(s). nxp does not accept any liability in this respect. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) will cause permanent damage to the device. limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the recommended operating conditions section (if present) or the characteristics sections of this document is not warranted. constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. terms and conditions of commercial sale ? nxp semiconductors products are sold subject to the gener al terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , unless otherwise agreed in a valid written individual agreement. in case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. nxp semiconductors hereby expressly objects to applying the customer?s general terms and conditions with regard to the purchase of nxp semiconducto rs products by customer. no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products t hat is open for acceptance or the grant, conveyance or implication of any lic ense under any copyrights, patents or other industrial or intellectual property rights. document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the objecti ve specification for product development. preliminary [short] data sheet qualification this document contains data from the preliminary specification. product [short] data sheet production this document contains the product specification.
blf178p all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 2 ? 16 february 2012 12 of 13 nxp semiconductors blf178p power ldmos transistor export control ? this document as well as the item(s) described herein may be subject to export control regu lations. export might require a prior authorization from competent authorities. non-automotive qualified products ? unless this data sheet expressly states that this specific nxp semicon ductors product is automotive qualified, the product is not suitable for automotive use. it is neither qualified nor tested in accordance with automotive testing or application requirements. nxp semiconductors accepts no liabili ty for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. in the event that customer uses t he product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without nxp semiconductors? warranty of the product for such automotive applicat ions, use and specifications, and (b) whenever customer uses the product for automotive applications beyond nxp semiconductors? specifications such use shall be solely at customer?s own risk, and (c) customer fully indemnifies nxp semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive app lications beyond nxp semiconductors? standard warranty and nxp semiconduct ors? product specifications. translations ? a non-english (translated) version of a document is for reference only. the english version shall prevail in case of any discrepancy between the translated and english versions. 12.4 trademarks notice: all referenced brands, produc t names, service names and trademarks are the property of their respective owners. 13. contact information for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com
nxp semiconductors blf178p power ldmos transistor ? nxp b.v. 2012. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please se nd an email to: salesaddresses@nxp.com date of release: 16 february 2012 document identifier: blf178p please be aware that important notices concerning this document and the product(s) described herein, have been included in section ?legal information?. 14. contents 1 product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description . . . . . . . . . . . . . . . . . . . . . 1 1.2 features and benefits . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 thermal characteristics . . . . . . . . . . . . . . . . . . 3 6 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 6.1 ruggedness in class-ab operation . . . . . . . . . 4 7 test information . . . . . . . . . . . . . . . . . . . . . . . . . 5 7.1 impedance information . . . . . . . . . . . . . . . . . . . 5 7.2 rf performance . . . . . . . . . . . . . . . . . . . . . . . . 5 7.2.1 1-tone cw pulsed . . . . . . . . . . . . . . . . . . . . . . 5 7.3 test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 8 package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 9 handling information. . . . . . . . . . . . . . . . . . . . 10 10 abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 10 11 revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 12 legal information. . . . . . . . . . . . . . . . . . . . . . . 11 12.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 12.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 12.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 12.4 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12 13 contact information. . . . . . . . . . . . . . . . . . . . . 12 14 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

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